Bi2(Zn2/3-x/3Nb4/3-2x/3Tix)O7 ceramics - a high permittivity microwave dielectrics for electronics application

High-K materials are needed for many microwave applications. In this paper microwave properties of Bi₂Zn₂/₃₋ₓ/₃Nb₄/₃₋₂ₓ/₃TiₓO₇ ceramics with x of 0, 0.2 and 0.4 are presented. Ceramics samples were prepared by solid state reaction from respective high purity oxide powders. Dielectric microwave properties of synthesised materials were measured at 3 GHz in a wide range of temperatures using Dielectric Post (DP) resonator technique. The high dielectric permittivity together with low sintering temperature make M-BNZ an attractive candidate for Low Temperature Co-fired Ceramics for charge storage applications in various electronics circuits and microwave systems.

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Asia Pacific Microwave Conference 2008

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978-1-4244-2642-3

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