Single-Step Synthesis of Nitrogen-Doped Graphene Oxide from Aniline at Ambient Conditions

Journal Publication ResearchOnline@JCU
Zafar, Muhammad Adeel;Varghese, Oomman K.;Robles Hernandez, Francisco C.;Liu, Yang;Jacob, Mohan V.
Yang Liu
Abstract

Single-step, single-precursor synthesis of nitrogen-doped graphene oxide (N-GO) was demonstrated in this work. By choosing aniline as the sole source of carbon and nitrogen, N-GO films were fabricated using microwave plasma at a power as low as 80 W in atmospheric conditions. The aniline vapor dissociated under plasma formed islands of N-GO nanosheets on the substrates or walls of the quartz deposition chamber. The interplanar spacing in the pristine N-GO films was observed to be lower than that of GO films, which indicated a lower concentration of oxygen and other species present in the space between the N-GO layers. The as-fabricated N-GO demonstrated superior antiscaling and algicidal properties that are deemed imperative for water purification applications.

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14

ISBN/ISSN

1944-8252

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Issue

4

Pages Count

10

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Publisher

American Chemical Society

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DOI

10.1021/acsami.1c21150