Bi2(Zn2/3-x/3Nb4/3-2x/3Tix)O7 ceramics - a high permittivity microwave dielectrics for electronics application
Conference Publication ResearchOnline@JCUAbstract
High-K materials are needed for many microwave applications. In this paper microwave properties of Bi₂Zn₂/₃₋ₓ/₃Nb₄/₃₋₂ₓ/₃TiₓO₇ ceramics with x of 0, 0.2 and 0.4 are presented. Ceramics samples were prepared by solid state reaction from respective high purity oxide powders. Dielectric microwave properties of synthesised materials were measured at 3 GHz in a wide range of temperatures using Dielectric Post (DP) resonator technique. The high dielectric permittivity together with low sintering temperature make M-BNZ an attractive candidate for Low Temperature Co-fired Ceramics for charge storage applications in various electronics circuits and microwave systems.
Journal
N/A
Publication Name
Asia Pacific Microwave Conference 2008
Volume
N/A
ISBN/ISSN
978-1-4244-2642-3
Edition
N/A
Issue
N/A
Pages Count
4
Location
Hong Kong
Publisher
IEEE
Publisher Url
N/A
Publisher Location
Hong Kong
Publish Date
N/A
Url
N/A
Date
N/A
EISSN
N/A
DOI
10.1109/APMC.2008.4958693