Microwave characterization of (La, Sr)(Ai,Ta)O3 using TE011 mode dielectric resonator

Journal Publication ResearchOnline@JCU
Jacob, M.V.;Mazierska, J.;Krupka, J.
Mohan Jacob
Abstract

The permittivity and loss tangent of a dielectric material can be estimated from precise measurement data of the Q-factor and resonant frequency of a dielectric resonator containing the material under test. We have characterized an (La,Sr)(AI,Ta)O, (LSAT) single crystal of the cylindrical shape using TE011 mode dielectric resonator in two enclosures at a frequency of 15.5 GHz at temperatures from 15 K to 293 K and an LSAT planar sample at 9.7 GHz using a post cryogenic TEo1, resonator. Our measurements have shown that permittivity of LSAT is in the vicinity of23 and exhibits a peak at temperature of 190 K. We have also studied the temperature coefficient of frequency of the LSAT substrate. Due to the weaker temperature dependence of permittivity of LSAT substrates, HTS devices and circuits fabricated on LSAT can be more stable than on Lanthanum Aluminate.

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29

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1382-3469

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4

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4

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Materials Research Society of Japan

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Leiden, Netherlands

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