Microwave characterization of as-grown MgB2 thin films prepared by molecular beam epitaxy
Journal Publication ResearchOnline@JCUAbstract
The MgB2 superconductor with TC of 39 K has great potential to replace some LTS materials in superconducting electronics. Thin films with low surface resistance, (RS) and negligible nonlinear effects are necessary to realize MgB2 circuits for microwave applications. The RS of MgB2 thin films varies significantly depending on the method of deposition and deposition conditions. We have investigated microwave properties of MgB2 thin films grown on MgO substrate by the Molecular Beam Epitaxy method with novel co-evaporation conditions at low deposition rate in ultra-high vacuum. The RS of as-grown MgB2 thin films have been measured using the Hakki-Coleman Sapphire dielectric resonator technique. High measurement accuracy was accomplished by using multifrequency measurements of S-parameters and the Transmission Mode Q-Factor technique for data processing to obtain the unloaded Qo-factor and resonant frequency of the dielectric resonator. Measured Rs of the MgB2 films of 400 μΩ was obtained at frequency of 24.6 GHz and temperature of 13 K. Microwave power characteristics of Rs indicates stable operation of MgB2 devices for the input power up to 10 dBm.
Journal
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
Publication Name
N/A
Volume
15
ISBN/ISSN
1558-2515
Edition
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Issue
2
Pages Count
4
Location
N/A
Publisher
IEEE
Publisher Url
N/A
Publisher Location
New York, USA -NY
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Date
N/A
EISSN
N/A
DOI
10.1109/TASC.2005.848870